宽温区内ZnO纳米线的CVD可控生长方法研究  

Controlled Synthesis of ZnO Nanowires in a Wide Temperature Range by CVD Method

作　　者：马可[1] 贺永宁[1] 张松昌[1] 刘卫华[1] 

机构地区：[1]西安交通大学电信学院微电子学系,西安710049

出　　处：《人工晶体学报》2012年第4期863-867,876,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金(60876038)

摘　　要：以Zn粉为材料,采用CVD法在宽温区内可控生长ZnO纳米线。利用SEM对产物进行了微观分析,考察了反应温度与升温时间对ZnO纳米线形貌的影响。用ZnO纳米线制成光电导型紫外光探测器,并测试了该器件的性能,考察了所得ZnO纳米线的光电特性。研究工作表明:用CVD法制备ZnO纳米线时的反应温度不限于某一个特定值,而是常压下在419.5℃以上的温区内均可进行,该宽温区ZnO纳米线CVD合成法的关键在于优化和匹配生长温度与加热时间两个参数。对紫外光探测器的性能测试结果表明,ZnO纳米线具有良好的紫外光电响应特性。ZnO nanowires were controlled synthesized based on CVD mechanism using the thermal evaporation method in a wide temperature range. Scanning electron microscopy （SEM） has been used to characterize the morphology of ZnO nanowires. In that way, the influence of reaction temperature and the heating time on the morphology of the ZnO nanostrueture were characterized by photoconductive UV detector. The photoelectric property of the ZnO nanowires were studied. The research work demonstrates that, using CVD method, ZnO nanowires could synthesize in a wide reaction temperature range above 419.5℃ under the atmospheric pressure, rather than at a very specific temperature point. The key solution for realizing the controlled growth in the wide temperature range is to optimize and matchup the heating time and reaction temperature. The measured photoeurrent of the device under UV illumination shows the outstanding optoelectronic response properties of the ZnO nanowires.

关 键 词：ZNO纳米线 CVD生长法 宽温区生长 光电导型紫外线探测器 

分 类 号：TB321[一般工业技术—材料科学与工程]