两步法溅射中缓冲层厚度对Ge薄膜质量的影响  

Effects of Buffer Layer Thickness on the Quality of Ge Thin Film Grown by Two-step Sputtering

作　　者：关中杰[1] 靳映霞[1] 王茺[1] 叶小松[1] 李亮[1] 杨宇[1] 

机构地区：[1]云南大学光电信息材料研究所,昆明650091

出　　处：《人工晶体学报》2012年第4期950-955,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金项目(10964016;10990103);云南省自然科学基金重点项目(2008CC012);教育部科学技术研究重点项目(210207);云南省教育厅科学研究基金(2011Y114)

摘　　要：采用低温缓冲层技术制备Ge薄膜,利用AFM和Raman光谱研究缓冲层厚度对低温Ge缓冲层残余应变弛豫的影响。实验结果显示:随着缓冲层厚度的增加,残余应变弛豫度增大。在30 nm厚的低温Ge缓冲层上生长800nm厚的Ge外延层。Ge薄膜具有良好的结晶性,表面粗糙度RMS为2.06 nm。Base on low temperature buffer layer method, the Ge thin film has been deposited on Si substrate with the radio-frequency magnetron sputtering. The varied thicknesses of low-temperature Ge buffer layers were characterized by AFM and Raman spectroscopy. The residual strain relaxation in the buffer layer was studied. The experimental results indicated that along with the increase of buffer layer thickness, the residual strain relaxation increased. The Ge epitaxial film which was 800 nm thick grown on 30 nm thickness buffer layer shown low surface roughness and good crystallization quality. The root- mean-square surface roughness of the Ge thin film was 2.06 nm.

关 键 词：Ge薄膜 低温Ge缓冲层 射频磁控溅射 

分 类 号：O484[理学—固体物理]