真空退火温度对掺铬类石墨镀层微观组织结构的影响  

Effect of Vacuum Annealing Temperature on the Microstructure of Cr-doped Graphite Like Carbon Coatings

作　　者：时惠英[1] 李洪涛[1] 蒋百灵[1] 

机构地区：[1]西安理工大学材料科学与工程学院,西安710048

出　　处：《人工晶体学报》2012年第4期1143-1147,共5页Journal of Synthetic Crystals

基　　金：陕西省教育厅科学技术研究计划(09JK623)资助项目

摘　　要：采用闭合场非平衡磁控溅射离子镀设备于单晶硅基体上制备了掺铬类石墨镀层,并利用X射线衍射仪(XRD)和透射电子显微镜(TEM)对真空退火处理前、后掺铬类石墨镀层的物相和微观组织结构演变规律进行了详细分析。研究结果表明:当真空退火温度达到500℃以上时,在掺铬类石墨镀层的C/Cr工作层中会相继出现Cr3C2、Cr23C6甚至微晶石墨等晶体;在掺铬类石墨镀层的真空退火过程中,Cr3C2碳化物相较Cr23C6碳化物相更容易于Cr原子弥散掺杂的非晶石墨层中析出,且Cr3C2碳化物相倾向于在C/Cr工作层中Cr原子浓度大的区域析出;Cr3C2和Cr23C6等碳化物相的析出对Cr原子浓度的依赖性逐渐减弱。The Cr-doped graphite like carbon coatings were deposited onto single crystal silicon by magnetron sputtering ion plating. The phase and microstructure of Cr-doped graphite like carbon coatings before and after vacuum annealing were analyzed in detail using XRD and TEM. The results show that： Cr3 C2, Cr23 C6 and even the microcrystalline graphite crystals can appear in the C/Cr working layer of Cr- doped graphite like carbon coatings successively as the vacuum annealing temperature above 500 ℃. During the vacuum annealing process of Cr-doped graphite like carbon coatings, Cr3C2 was precipitated easily in amorphous graphite layer with Cr atoms doped compared to Cr23 C6, and Cr3C2 carbides tend to precipitate around the high concentration zone of Cr atoms in the C/Cr working layer. The dependence of Cr3 C2, Cr23C6 etc. carbides precipitation on Cr atoms concentration was gradually weakened.

关 键 词：真空退火 掺铬类石墨镀层 微观组织结构 

分 类 号：O484[理学—固体物理]