钨掺杂二氧化钒薄膜的THz波段相变性能的研究(英文)  

Study on Phase Transition Property of Tungsten-doped Vanadium Dioxide Thin Film at Terahertz Range

作　　者：毛茂[1] 黄婉霞[1] 张雅鑫[2] 颜家振[1] 罗轶[1] 施奇武[1] 蔡靖涵[1] 

机构地区：[1]四川大学材料科学与工程学院,成都610064 [2]电子科技大学物理电子学院,成都610054

出　　处：《无机材料学报》2012年第8期891-896,共6页Journal of Inorganic Materials

基　　金：National Natural Science Foundation of China(61072036)

摘　　要：通过溶胶–凝胶法制备纯的VO2和W掺杂的VO2薄膜,并且进行了XPS、AFM和XRD的分析与表征,并观察了其微观形貌和结构.同时研究了VO2和W掺杂VO2在红外光谱（λ=4μm）和THz（0.3~1.0 THz）区域的金属–绝缘转变性能.结果表明：室温下W掺杂的VO2薄膜在红外和THz区域的初始透过率都比纯的VO2薄膜低.在THz波段,W掺杂的VO2表现出更低的相变温度.同时在VO2和W掺杂VO2相变过程中,观察到了金属–绝缘转变和结构转变的现象,W掺杂VO2具有明显的峰位偏移现象.Vanadium dioxide and tungsten-doped （W-doped） vanadium dioxide thin films deposited by aqueous Sol-Gel method were characterized with several different techniques （i.e. X-ray photoelectron spectroscope, atomic force microscope, X-ray diffraction）, to determine their morphology and microstructure. Their metal-to-insulator （MIT） phase transition behavior in infrared spectral region （λ=4 μm） and terahertz （THz） spectral region （0.3–1.0 THz） were observed respectivele. The results demonstrate that the transmittance of W-doped VO 2 film at room temperature is visibly lower than that of undoped VO 2 film in both infrared and terahertz spectral region. The transition temperature of W-doped VO 2 film is also lower than that of undoped VO 2 film in the THz range. The MIT and structural phase transition （SPT） are observed during the phase transition of VO 2 and W-doped VO 2 , and an obvious change of peak position occurs in W-doped VO 2 film.

关 键 词：二氧化钒 红外透过率 太赫兹 钨掺杂 

分 类 号：TB34[一般工业技术—材料科学与工程]