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机构地区:[1]湖南铁道职业技术学院电气工程系,湖南株洲412001
出 处:《固体电子学研究与进展》2012年第4期375-379,共5页Research & Progress of SSE
摘 要:基于0.6μm CMOS混合信号工艺设计了一款高稳定度、宽电源电压范围的晶体振荡器芯片。该芯片片内集成具有优异频率响应的振荡器电容和反馈电阻,只需外接石英晶体即可提供高稳定时钟源。测试结果表明:芯片最高工作频率可达40MHz;在振荡频率12MHz、负载电容15pF、电源电压从2.7V到5.5V变化时其频率随电源电压变化率小于1×10-6;电源电压为5V时芯片消耗总电流小于4mA。Based on 0. 6 μm mixed signal CMOS process, a crystal oscillator chip with high stability and wide power supply range is designed in this paper. The chip integrates an oscillating capacitor characterized with excellent frequency response and feedback resistors built-in. A stable clock source can be provided while the chip is connected with a crystal. The test results show that the maximum operating frequency can be up to 40 MHz. The frequency stability is less than 1 × 10^-6 with power supply of 2.7 V to 5.5 V, oscillation frequency of 12 MHz and load capacitance of 15 pF. The total current consumption of the chip is less than 4 mA when power supply is 5 V.
分 类 号:TN752[电子电信—电路与系统]
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