退火温度对硅/氧化硅多层膜微结构的影响  

Effect of Annealing Temperature on Microstructure of the Si/SiO_x Multilayers

作　　者：陈德媛[1,2] 冒昌银[1] 

机构地区：[1]南京邮电大学电子科学与工程学院.江苏南京210046 [2]南京大学电子科学与工程学院,江苏南京210093

出　　处：《南京邮电大学学报（自然科学版）》2012年第4期97-100,109,共5页Journal of Nanjing University of Posts and Telecommunications：Natural Science Edition

基　　金：国家重点基础研究发展计划(973计划)(2007CB613401);国家自然科学基金(10874070;60721063;50872051);江苏省高校自然科学基金(09KJB510008;09KJB510010;09KJB510014;10KJB510015);江苏省青蓝计划(NY210037);南京邮电大学引进人才启动基金(NY208056)资助项目

摘　　要：采用等离子体增强化学气相淀积系统,应用原位氧化和原位掺杂技术制备出了非晶硅/二氧化硅多层膜结构。对多层膜结构进行不同温度下热退火后处理,通过傅里叶变化红外吸收光谱和拉曼散射光谱对其微结构的变化进行了表征。结果表明,原始淀积的多层膜结构中,存在大量的氢原子,以硅氢键和硅键合;随着退火温度从450℃升高到650℃,光谱中与硅氢键相关的信号逐渐减弱,说明氢原子不断解离;另一方面,硅氧键弯曲振动模式随着退火温度升高而增强;硅氧键的伸缩振动模式位置蓝移、强度增强,说明硅氧之间的配比随着退火温度升高不断接近化学配比;通过拉曼散射谱可以观测到非晶硅在高温下发生相变,形成纳米硅晶粒。A-Si/SiOx muhilayers were prepared in plasma enhanced chemical vapour deposition system applying the in situ oxidization technologies. The multilayers were annealing at furnace temperature of 450℃ ,650℃ and 1 000℃ ,respectively,in N2 ambient for about l h. Cross-section Transmission electron microscope, Raman scattering, Fourier Transform infrared spectroscopy techniques were used to characterize the microstuctures of the muhilayers. In results,lots of hydrogen atoms were in the as deposited a-Si films, and bonded with silicon or oxygen atoms from the FTIR and Raman spectra. After annealing, the intensity of the signal related to Si-H bonds becoming weaker with increasing annealing temperature. Si-H Bonds were breaked during annealing, and hydrogen atoms separated out, leaving silicon and oxygen atoms moved relatively. （ SiO4 ） radicals formed in the silicon oxide films ; and nano-crystal silicon grains formed in silicon films drove by the thermal energy.

关 键 词：傅里叶变换红外吸收 拉曼散射 退火 横向光学模式 

分 类 号：O76[理学—晶体学]