Band offsets between amorphous La_2Hf_2O_7 and silicon  

作　　者：程学瑞 王永强 戚泽明 张国斌 王玉银 邵涛 张文华 

机构地区：[1]Department of Technology and Physics,Zhengzhou University of Light Industry [2]National Synchrotron Radiation Laboratory,University of Science and Technology of China

出　　处：《Journal of Rare Earths》2012年第8期847-850,共4页稀土学报（英文版）

基　　金：Projects supported by National Natural Science Foundation of China(10974191);Doctorial Foundation of Zhengzhou University of LightIndustry(2010BSJJ028)

摘　　要：Abstract： Amorphous LazHf2O7 films were grown on Si（100） by pulsed laser deposition method. The valence and conduction band offsets between amorphous La2Hf2O7 film and silicon were determined by using synchrotron radiation photoemission spectroscopy. The energy band gap of amorphous La2Hf2O7 film was measured from the energy-loss spectra of O ls photoelectrons. The band gap of amorphous LazHf2O7 film was determined to be 5.4±0.2 eV. The valence and the conduction-band offsets of amorphous La2Hf2O7 film to Si were obtained to be 2.7±0.2 and 1.6±0.2 eV, respectively. These results indieated that the amorphous La2Hf2O7 film could be one promising candidate for high-k gate dielectrics.Abstract： Amorphous LazHf2O7 films were grown on Si（100） by pulsed laser deposition method. The valence and conduction band offsets between amorphous La2Hf2O7 film and silicon were determined by using synchrotron radiation photoemission spectroscopy. The energy band gap of amorphous La2Hf2O7 film was measured from the energy-loss spectra of O ls photoelectrons. The band gap of amorphous LazHf2O7 film was determined to be 5.4±0.2 eV. The valence and the conduction-band offsets of amorphous La2Hf2O7 film to Si were obtained to be 2.7±0.2 and 1.6±0.2 eV, respectively. These results indieated that the amorphous La2Hf2O7 film could be one promising candidate for high-k gate dielectrics.

关 键 词：pulsed laser deposition La2Hf2O7 films band offset rare earths 

分 类 号：O614.331[理学—无机化学]