IGCT的状态检测与逻辑控制  

IGCT's Status Detection and Logic Control

作　　者：谢路耀[1] 金新民[1] 童亦斌[1] 吴学智[1] 

机构地区：[1]北京交通大学新能源研究所,北京100044

出　　处：《电工技术学报》2012年第8期261-269,共9页Transactions of China Electrotechnical Society

基　　金：国家科技支撑计划资助项目(2007BAA12B04)

摘　　要：门极驱动单元是集成门极换流晶闸管(IGCT)的重要组成部分。除了完成强触发导通与门极换流关断外,门极驱动单元还必须具备可靠的工作状态检测与逻辑控制功能。本文将从门极换流晶闸管(GCT)芯片的基本结构与IGCT驱动的基本原理出发,结合工业上广泛应用的NPC三电平拓扑,分析不同工况下GCT门阴极电位变化的基本机理,以及各个工况对门极驱动逻辑控制的要求。最后设计了一种带有精确状态检测功能的门极驱动单元,并在一个自主研发的NPC三电平功率模块上进行了功能测试。实验得到了各个工况下IGCT换流过程与门极驱动单元检测电路的实际波形,验证了门极驱动单元具有优异的状态检测与逻辑控制功能。Gate unit is an important part of integrated gate commutated thyristor（IGCT）.Besides fulfilling the ＂hard drive＂ concept,the gate unit should be equipped with reliable status detection and logical control capability.As a current controlled semiconductor,gate commutated thyristor（GCT） has a special characteristic that its gate to cathode junction shows particular voltage when conducting,blocking and its anti-parallel free-wheeling diode is conducting.High speed and precise gate to cathode voltage detection is the key for gate unit to fulfill the status feedback,back porch current generation and retrigger control.In this paper,proceeding from the structure of GCT＇s silicon wafer and ＂hard drive＂ principle,combined with the widely used neutral point clamp（NPC） three level topology,the gate to cathode voltage transformation mechanism and the necessary logical control of gate unit are detailed analyzed.Finally,a gate unit with precise status detection capability is designed and tested in a NPC three level power electronic building block.The experimental results present the waveforms of the IGCT commutation transition and the gate unit feedback signals under different working conditions and verify the goodness of the gate unit＇s status detection function and logic control.

关 键 词：GCT IGCT 集成门极驱动单元 硬驱动 状态检测 

分 类 号：TN34[电子电信—物理电子学]