脉冲电沉积法制备SnS薄膜及其光电性质研究  

Growth of SnS Film by Pulsed Electrodeposition and Its Optoelectronic Properties

作　　者：喀哈尔.玉苏普 林涛[1] 耿雷[1] 徐岭[1] 徐骏[1] 

机构地区：[1]南京大学电子科学与工程学院物理学院,南京210093

出　　处：《真空科学与技术学报》2012年第8期682-687,共6页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金项目(61036001);江苏省国际科技合作计划项目(BZ2010068)

摘　　要：在ITO玻璃衬底上使用脉冲电沉积法制备了SnS薄膜,研究了不同的开启脉冲电位对薄膜表面,薄膜结构以及光学性质的影响。结果表明,在不同开启脉冲电位下制备出来的SnS薄膜的禁带宽度可以在1.3-1.62 eV范围内变化,并且随着开启脉冲电位的增大,薄膜的禁带宽度逐渐变大。在开启脉冲电位为-0.70V（vs.SCE）时,制备的薄膜禁带宽度为1.53 eV,在可见光范围内光吸收系数均达到104cm^-1以上。扫描电子显微镜的测试结果表明所得薄膜的表面平整并且均匀。结合X射线衍射结果可证实制备出的薄膜是由正交结构晶粒组成的多晶体。对薄膜进行变温电学性质的测试,得到了薄膜电导率温度谱,发现室温下薄膜的电导率为10-6S.cm^-1。同时,在实验上发现了薄膜与Al电极形成了肖特基接触,由电学测试推导出肖特基势垒高度为0.58 eV。The SnS films were grown by pulsed electro-deposition on the glass substrates coated with indium-tin oxide.The influence of the deposition conditions,including the pulse height and width,concentrations of electrolytes,and deposition time,on the microstructures and optoelectronic properties were evaluated.The microstructures of the SnS films were characterized with X-ray diffraction,and scanning electron microscopy.The results show that the onset voltage of the pulse strongly affects the optical gap width of the SnS films.For instance,as the onset voltage increased,the band gap widened,increased from 1.3 eV to 1.62 eV.At-0.7 V,the band gap of the fairly uniform polycrystalline films with orthorhombic structured grains,was found to be 1.53 eV,with an absorptance over 104 cm-1 in the visible light range.The conductivity of the films at room temperature was measured to be 10-6 S·cm^-1.A prototyped Schottky contact was fabricated with Al/SnS/indium-tin oxide structure,and the Schottky barrier height was estimated to be about 0.58 V,according to the thermonic emission model.

关 键 词：SnS薄膜 结构 脉冲电沉积法 肖特基接触 

分 类 号：TN304.2[电子电信—物理电子学]