硅碳氧薄膜光学性能研究  

Synthesis and Characterization of Silicon Oxycarbide Films

作　　者：李晨[1] 陈焘[1] 王多书[1] 张平[1] 

机构地区：[1]兰州空间技术物理研究所表面工程技术重点实验室,兰州730000

出　　处：《真空科学与技术学报》2012年第8期732-735,共4页Chinese Journal of Vacuum Science and Technology

基　　金：表面工程技术重点实验室基金项目(914C540107090C54)资助

摘　　要：硅碳氧（SiCO）薄膜是一种三元玻璃状化合物材料,具有热稳定性好、能带宽、折射率大、硬度高等特性,是一种具有潜在应用价值的新颖光学薄膜材料。本文采用射频磁控溅射技术在Si（100）及K9玻璃上制备了硅碳氧薄膜。利用椭圆偏振仪、紫外/可见/近红外光度计及X射线光电子能谱测试表征了薄膜的光学性能及薄膜组分。研究发现,通过改变基片温度、工作压强及溅射功率等工艺参数,所制备的硅碳氧薄膜均具有高折射率（大于1.80）,相比之下,K9玻璃基硅碳氧薄膜的折射率有着更大的变化范围（1.84~2.20）。通过对K9玻璃基硅碳氧薄膜的光学透射性能研究表明,以硅碳氧陶瓷作为溅射靶材,采用射频磁控溅射技术在K9玻璃基上可以制备出,在可见光及近红外区域有着较好光学透射性能,平均透过率能到达83%的硅碳氧薄膜。The silicon oxycarbide（SiCO） thin films,an advanced optical material,were deposited by RF magnetron sputtering on Si（100） and K9 glass substrates.The influencing growth factors,such as the substrate temperature,sputtering power,and pressure,were evaluated.The SiCO films were characterized with spectroscopic ellipsometry,and ultraviolet visible near-infrared spectroscopy（UV-Vis-NIR）,and X-ray photoelectron spectroscopy.The results show that the sputtering power,pressure,and substrate type and temperature affect,to a varying degree,the deposition rate and refractive index of the SiCO films.At a wavelength of 632.8 nm,the refractive index of all the SiCO films on Si（100） were found to be higher than 1.8,whereas the refractive index of the SiCO films on K9 glass ranges from 1.84 to 2.20.In addition,the transmittance of SiCO film on K9 glass was found to be fairly high in the visible and near infrared region,with an average of 83%.

关 键 词：硅碳氧 薄膜 射频磁控溅射技术 光学性能 

分 类 号：TB34[一般工业技术—材料科学与工程]