Influence of growth temperature and thickness on the orientation of Cu(In,Ga)Se_2 film  

作　　者：李博研 张毅 刘玮 孙云 

机构地区：[1]Tianjin Key Laboratory for Photoelectronic Thin Film Devices and Technology,Institute of Photo electronic Thin Film Devices and Technology

出　　处：《Optoelectronics Letters》2012年第5期348-351,共4页光电子快报（英文版）

基　　金：supported by the National Natural Science Foundation of China (Nos.60906033,50902074,90922037,61076061);the Natural Science Foundation of Tianjin City (No.11JCYBJC01200);the National "863" Key Project of China (No.2004AA513020)

摘　　要：Cu(In,Ga)Se2(CIGS) films are deposited on the Na-free glass substrate using three-stage co-evaporation process,and the effects of thickness and growth temperature on the orientation of CIGS film are investigated by X-ray diffraction(XRD) and scanning electron microscopy(SEM).When the growth of CIGS film does not experience the Cu-rich process,the increase of the growth temperature at the second stage(Ts2) promotes the(112) orientation of CIGS film,and weakens the(220) orientation.Nevertheless,when the growth of CIGS film experiences Cu-rich process,the increase of Ts2 significantly promotes the(220) orientation.In addition,with the thickness of CIGS film decreasing,the extent of(In,Ga)2Se3(IGS) precursor orientation does not change except for the intensity of Bragg peak,yet the(220) orientation of following CIGS film is hindered,which suggests that(112) plane preferentially grows at the initial growth of CIGS film.

关 键 词：Copper GALLIUM Growth temperature Scanning electron microscopy SODIUM SUBSTRATES X ray diffraction 

分 类 号：TM914.42[电气工程—电力电子与电力传动]