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作 者:罗蓉蓉[1] 何鹏[1] 黄婉霞[1] 颜家振[1] 蔡靖涵[1]
机构地区:[1]四川大学,四川成都610065
出 处:《稀有金属材料与工程》2012年第8期1327-1330,共4页Rare Metal Materials and Engineering
摘 要:采用溶胶凝胶及后退火工艺制备云母基底的二氧化钒薄膜,采用XRD、SEM、FTIR及色差研究薄膜的性能。FTIR结果表明:在金属-半导体相变过程中,薄膜在红外光区的透过率变化为77%;变色性能显示相变时薄膜从低温的黄褐色变为高温黄绿色,色差E*随温度的变化规律与光学开关性能类似,色差E*在相变过程中的最大值为11.31。VO2 films on muscovite substrate were fabricated by inorganic sol-gel method and the following thermal treatment.The films were characterized by X-ray diffraction,scanning electron microscope(SEM),fourier transform infrared spectrophotometer(FTIR) and color difference(E*).The FTIR result shows that the film has an infrared transmittance switching efficiency of 77% in the metal-insulator transition.The color changing properties indicate that the film color reversibly changes from khaki to yellow-green as the temperature changes.The relationship between E* and the temperature presents a hysteresis loop,which is in accordance with the infrared optical switching properties.The maximum of E* during the film metal-insulator transition is 11.31.
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