Activation of silicon quantum dots for emission  

作　　者：黄伟其 苗信建 黄忠梅 刘世荣 秦朝建 

机构地区：[1]Key Laboratory of Photoelectron Technology and Application,Institute of Nanophotonic Physics,Guizhou University [2]State Key Laboratory of Ore Deposit Geochemistry,Institute of Geochemistry,Chinese academy of Sciences

出　　处：《Chinese Physics B》2012年第9期295-300,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant No. 60966002);the National Key Laboratory of Surface Physics, Fudan University, China

摘　　要：The emission of silicon quantum dots is weak when their surface is passivated well. Oxygen or nitrogen on the surface of silicon quantum dots can break the passivation to form localized electronic states in the band gap to generate active centers where stronger emission occurs. From this point of view, we can build up radiative matter for emission. Emissions of various wavelengths can be obtained by controlling the surface bonds of silicon quantum dots. Our experimental results demonstrate that annealing is important in the treatment of the activation, and stimulated emissions at about 600 and 700 nm take place on active silicon quantum dots.The emission of silicon quantum dots is weak when their surface is passivated well. Oxygen or nitrogen on the surface of silicon quantum dots can break the passivation to form localized electronic states in the band gap to generate active centers where stronger emission occurs. From this point of view, we can build up radiative matter for emission. Emissions of various wavelengths can be obtained by controlling the surface bonds of silicon quantum dots. Our experimental results demonstrate that annealing is important in the treatment of the activation, and stimulated emissions at about 600 and 700 nm take place on active silicon quantum dots.

关 键 词：activation for emission silicon quantum dots localized states 

分 类 号：O431.2[机械工程—光学工程]