A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics  

作　　者：吕元杰 林兆军 于英霞 孟令国 曹芝芳 栾崇彪 王占国 

机构地区：[1]School of Physics,Shandong University [2]Laboratory of Semiconductor Materials science,Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2012年第9期436-439,共4页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos. 10774090 and 11174182);the National Basic Research Program of China (Grant No. 2007CB936602);the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20110131110005)

摘　　要：An Ni Schottky contact on the A1GaN/GaN heterostructure is fabricated. The flat-band voltage for the Schottky contact on the A1GaN/GaN heterostructure is obtained from the forward current-voltage characteristics. With the measured capacitance-voltage curve and the flat-band voltage, the polarization charge density in the A1GaN/GaN heterostructure is investigated, and a simple formula for calculating the polarization charge density is obtained and analyzed. With the approach described in this paper, the obtained polarization charge density agrees well with the one calculated by self-consistently solving Schrodinger＇s and Poisson＇s equations.An Ni Schottky contact on the A1GaN/GaN heterostructure is fabricated. The flat-band voltage for the Schottky contact on the A1GaN/GaN heterostructure is obtained from the forward current-voltage characteristics. With the measured capacitance-voltage curve and the flat-band voltage, the polarization charge density in the A1GaN/GaN heterostructure is investigated, and a simple formula for calculating the polarization charge density is obtained and analyzed. With the approach described in this paper, the obtained polarization charge density agrees well with the one calculated by self-consistently solving Schrodinger＇s and Poisson＇s equations.

关 键 词：A1GaN/GaN heterostructures fiat-band voltage polarization charge density 

分 类 号：TN386[电子电信—物理电子学]