Scaling properties of phase-change line memory  

作　　者：杜小锋 宋三年 宋志棠 刘卫丽 吕士龙 顾怡峰 薛维佳 席韡 

机构地区：[1]State Key Laboratory of Functional Materials for Informatics,Laboratory of Nanotechnology,Shanghai Institute of Micro-system and Information Technology,Chinese Academy of Sciences

出　　处：《Chinese Physics B》2012年第9期554-558,共5页中国物理B（英文版）

基　　金：Project supported by the National Integrate Circuit Research Program of China (Grant No. 2009ZX02023-003);the National Key Basic Research Program of China (Grant Nos. 2010CB934300, 2011CBA00602, and 2011CB932800);the National Natural Science Foundation of China (Grant Nos. 60906003, 60906004, 61006087, and 61076121);the Science and Technology Council of Shanghai of China (Grant No. 1052nm07000)

摘　　要：Phase-change line memory cells with different line widths are fabricated using focused-ion-beam deposited C-Pt as a hard mask. The electrical performance of these memory devices was characterized. The current^oltage （I-V） and resistance-voltage （RV） characteristics demonstrate that the power consumption decreases with the width of the phase-change line. A three-dimensional simulation is carried out to further study the scaling properties of the phase- change line memory. The results show that the resistive amorphous （RESET） power consumption is proportional to the cross-sectional area of the phase-change line, but increases as the line length decreases.Phase-change line memory cells with different line widths are fabricated using focused-ion-beam deposited C-Pt as a hard mask. The electrical performance of these memory devices was characterized. The current^oltage （I-V） and resistance-voltage （RV） characteristics demonstrate that the power consumption decreases with the width of the phase-change line. A three-dimensional simulation is carried out to further study the scaling properties of the phase- change line memory. The results show that the resistive amorphous （RESET） power consumption is proportional to the cross-sectional area of the phase-change line, but increases as the line length decreases.

关 键 词：phase-change memory line structure scaling properties three-dimensional simulation 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]