SPICE modeling of memristors with multilevel resistance states  

作　　者：方旭东 唐玉华 吴俊杰 

机构地区：[1]National Laboratory for Parallel and Distributed Processing,School of Computer,National University of Defense Technology [2]Department of Computer Science and Technology,School of Computer,National University of Defense Technology

出　　处：《Chinese Physics B》2012年第9期594-600,共7页中国物理B（英文版）

基　　金：Project supported by the Science Fund for Creative Research Groups of the National Natural Science Foundation of China (GrantNo. 60921062);the National Natural Science Foundation of China (Grant No. 61003075)

摘　　要：With CMOS technologies approaching the scaling ceiling, novel memory technologies have thrived in recent years, among which the memristor is a rather promising candidate for future resistive memory （RRAM）. Memristor＇s potential to store multiple bits of information as different resistance levels allows its application in multilevel cell （MCL） tech- nology, which can significantly increase the memory capacity. However, most existing memristor models are built for binary or continuous memristance switching. In this paper, we propose the simulation program with integrated circuits emphasis （SPICE） modeling of charge-controlled and flux-controlled memristors with multilevel resistance states based on the memristance versus state map. In our model, the memristance switches abruptly between neighboring resistance states. The proposed model allows users to easily set the number of the resistance levels as parameters, and provides the predictability of resistance switching time if the input current/voltage waveform is given. The functionality of our models has been validated in HSPICE. The models can be used in multilevel RRAM modeling as well as in artificial neural network simulations.With CMOS technologies approaching the scaling ceiling, novel memory technologies have thrived in recent years, among which the memristor is a rather promising candidate for future resistive memory （RRAM）. Memristor＇s potential to store multiple bits of information as different resistance levels allows its application in multilevel cell （MCL） tech- nology, which can significantly increase the memory capacity. However, most existing memristor models are built for binary or continuous memristance switching. In this paper, we propose the simulation program with integrated circuits emphasis （SPICE） modeling of charge-controlled and flux-controlled memristors with multilevel resistance states based on the memristance versus state map. In our model, the memristance switches abruptly between neighboring resistance states. The proposed model allows users to easily set the number of the resistance levels as parameters, and provides the predictability of resistance switching time if the input current/voltage waveform is given. The functionality of our models has been validated in HSPICE. The models can be used in multilevel RRAM modeling as well as in artificial neural network simulations.

关 键 词：MEMRISTOR multilevel cell SPICE model 

分 类 号：TM54[电气工程—电器]