温度波动对PV型InSb探测器响应特性的影响  

Influence of Temperature Fluctuations on Response Characteristic of PV-InSb Detector

作　　者：孙静[1] 杜立峰[1] 张蓉竹[1] 

机构地区：[1]四川大学电子信息学院,成都610064

出　　处：《半导体光电》2012年第4期478-482,共5页Semiconductor Optoelectronics

摘　　要：对激光照射下光伏型锑化铟光电探测器的响应特性进行了研究,得到了强激光辐照下温度波动(低温和常温温度波动)对探测器响应特性的影响。利用材料内部的光生电动势分析模型,通过数值模拟,给出了理论上的激光辐照下主要参数对探测器输出电压的影响。结果表明:输出电压随着温度的上升而降低,饱和电压也随着温度的上升而降低。特别是低温与常温下的响应特性有所不同,随着入射光功率的增大,低温下随温度变化的输出电压变化量减小,常温下随温度变化的输出电压变化量增大。The response of PV-InSb detector under laser irradiation is studied in detail, and the influence of temperature fluctuations on the response characteristic of detector under high power laser irradiation is obtained. By using the mathematic model of photo-electromotive force, a theoretical influence of several main parameters on output voltage under laser irradiation is given. The results show that output voltage and saturated voltage decrease with the increase of temperature. There are some differences in the output voltage under low temperature and normal temperature. The variations of output voltage caused by the changes of temperature decrease with the increase of incident light power under low temperature but increase with the increase of incident light power under normal temperature.

关 键 词：光伏型光电探测器 INSB 温度波动 响应特性 

分 类 号：TN215[电子电信—物理电子学]