电阻法测试超薄膜厚度的研究  

Thickness Study of Ultra-thin Film by Resistance Test

作　　者：万晓枫[1] 刘爽 何存玉 

机构地区：[1]电子科技大学 计算机科学与工程学院 [2]光电信息学院,成都610054 [3]成都言佰科技有限公司,成都610031

出　　处：《半导体光电》2012年第4期537-539,共3页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(61177035);四川省科技支撑项目;四川省应用基础研究项目

摘　　要：常规方法测试超薄膜的厚度存在很大困难。介绍一种测试约4nm PtSi厚度的电阻率法。先制备厚度约40nm的薄膜,测试出薄膜电阻率,再考虑超薄膜的表面效应、尺寸效应,推导出超薄膜电阻率与薄膜电阻率的关系式,测试超薄膜方电阻,计算出超薄膜厚度。给出了TEM晶格像验证结果,误差小于6%。实验表明该方法简单易行,对其他超薄膜厚度的测试提供了参考。It is very difficult to test the thickness of ultra-thin films by conventional methods, so a method based on resistance test to determine the thickness of -4 nm PtSi ultra- thin film is introduced. Firstly, the film with the thickness of - 40 nm was prepared, and then its resistivity was tested. The relationship between the film resistivity and ultra-thin film resistivity was deduced based on analyzing surface effect and size effect of ultra-thin film. And the quartet resistivity and thickness were tested and calculated, respectively. Finally the results of TEM lattice image of the ultra-thin sample were given with an error rate of less than 6%. It shows that the method is convenient and can be used to determine the thickness of other ultrathin film.

关 键 词：超薄PtSi膜 厚度测试 尺寸效应 TEM晶格像 

分 类 号：TN307[电子电信—物理电子学]