栅极电势对强光场下石墨烯场效应管中电子隧穿的影响  

The influence of gate voltage on electron transport in the graphene field-effect transistor under strong laser field

作　　者：刘江涛[1] 黄接辉[1] 肖文波[2] 胡爱荣[1] 王建辉[1] 

机构地区：[1]南昌大学物理系,南昌330031 [2]南昌航空大学无损检测技术教育部重点实验室,南昌330063

出　　处：《物理学报》2012年第17期458-462,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:10904059;11174118;11147200);江西省自然科学基金(批准号:2009GQW0017);航空科学基金(批准号:2010ZB56004);江西省教育厅基金(批准号:GJJ11176);无损检测技术教育部重点实验室开放基金(批准号:ZD201029005)资助的课题~~

摘　　要：利用时域有限差分方法研究了强光场下石墨烯场效应管中栅极电势对电子隧穿的影响.在强光场下由于光学stark效应,石墨烯场效应管的完美手征透射被抑制.这种抑制除了可以利用光场来调控外,也可以通过改变栅极电势的宽度、势垒高度等来调控.研究了非方势垒中电子的隧穿.研究发现,当电势的倾斜较小时,电子隧穿概率变化不大.而当电势倾斜很大时,电子隧穿概率急剧改变.The influence of gate voltage on electron transport in the graphene field-effect transistor under strong laser field is studied by using the finite-difference time-domain method. The perfect tunneling in graphene can be strongly suppressed by the strong laser field induced optical stark effect. This suppression depends not only on the laser field but also on the width and the height of the gate voltage. The electron transport through a non-square barrier is investigated. We find that a barrier with a small incline has little effect on the electron transport, but if the barrier has a large incline, the tunneling probability changes remarkably.

关 键 词：石墨烯 输运性质 有限时域差分方法 

分 类 号：TN386[电子电信—物理电子学]