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机构地区:[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054
出 处:《红外与激光工程》2012年第8期2008-2011,共4页Infrared and Laser Engineering
基 金:国家973项目(513130300301)
摘 要:提出了一种基于有源电阻的电阻反馈跨导放大器(RTIA)红外焦平面读出电路,该电路采用工作在亚阈区的MOS管实现1011Ω以上的有源大电阻,不仅能与热释电红外探测器的高阻抗良好匹配,而且配合两管共源放大器可针对热释电微弱信号进行高增益电流放大。同时,简单的三管单元结构能够方便地置于像元之下,相比于采用特殊高阻材料实现的RTIA,不附加材料和工艺。经上华0.5μmCMOS工艺流片验证,在5 V电源电压下,该电路增益40 dB,输出摆幅3 V,在高低温测试下表现出了良好的增益带宽稳定性,适用于PZT和BST等热释电大阵列探测器。A Resistive Trans-impedance Amplifier (RTIA) readout circuit for Uncooled Focal Plane Array (UFPA) using active resistor was proposed in this paper. By using a sub-threshold MOSFET as a 10^11 Ω and above feedback resistor, a high gain current amplifier could be realized by common source structure which consisted of two transistors. The simple three transistors could be easily integrated under pixel and it had good impedance matching with pyroelectric infrared detector. Compared with traditional RTIAs which use special high-resistance materials as feedback resistor, the novel RTIA was low cost because no additional materials and processes were needed. The circuit was successfully manufactured by 0.5 μm standard CMOS process of CSMC foundry. 40 dB gain and 3 V output swing were realized by this design and the gain and bandwidth of the chip kept stable during high and low temperature tests. So it can be used for large arrays pyroelectric detectors such as Lead Zirconate Titanate (PZT) and Barium Strontium Titanate (BST), etc.
分 类 号:TN21[电子电信—物理电子学]
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