GaAs量子阱中退极化效应对光学整流的影响  

Influence of depolarization effect on optical rectification in GaAs quantum well

作　　者：彭飞[1] 

机构地区：[1]南通大学江苏省专用集成电路设计重点实验室,江苏南通226019

出　　处：《量子电子学报》2012年第5期597-601,共5页Chinese Journal of Quantum Electronics

摘　　要：用弛豫时间近似和紧致密度矩阵方法，在施加偏向电场的GaAs方量子阱中，研究了退极化场对光学整流的影响。结果表明，退极化场使共振峰的位置向高能方向发生移动。对应三个不同的偏向电场F=3×104V／cm，4×104V／cm，8×104V／cm的共振峰的位置分别为^u=108．48meV，108．92meV，111．99meV。共振峰位置的偏移量分别为5．96meV、5．99meV、6．28meV，其偏移量随偏向电场的增大而略有增大。The influence of the depolarization effect on the optical rectification in electric-field-biased GaAs quantum well is studied using relaxation time approximation and a compact density-matrix approach. The results obtained show that the depolarization effect shifts the position of the resonance peak. For three different bias fields, F=3×104V/cm,4×104V/cm,8×104V/cm, the peak position is hw= 108.48 meV, 108.92 meV, 111.99 meV, respectively. The shift of the peak position is 5.96 meV, 5.99 meV and 6.28 meV, respectively, which increases with the bias field.

关 键 词：非线性光学 光学整流 退极化效应 量子阱 

分 类 号：O437[机械工程—光学工程] O482.3[理学—光学]