光诱导沉积铜制备硅太阳能电池电极的影响因素  

Factors affecting light-induced copper deposition for making electrode of silicon solar cell

作　　者：莫烨强[1] 罗建成[1] 黄启明[1] 李伟善[1] 

机构地区：[1]华南师范大学化学与环境学院,广东广州510006

出　　处：《电镀与涂饰》2012年第9期1-4,共4页Electroplating & Finishing

摘　　要：采用电化学方法研究了不同操作条件对经预处理的太阳能电池用硅片在硫酸铜溶液中光诱导沉积铜而制备光伏电极的影响。结果表明,选择带电入槽而无冲击电流的操作方式时,所得到的沉积层具有较好的结合力。采用封闭背电极的操作方式可以减少铝层溶解而避免镀液被污染。若采用开放的连接方式,铝电极的溶解和金属铜的沉积取决于外加电位。当施加电位为0.5V(相对于饱和甘汞电极)时,可以阻止铝背电极的溶解。The effects of different operating condition of light-induced copper deposition on pretreated silicon wafer for making photovoltaic electrode of solar cell were studied electrochemically in a CuSO4 solution. The results showed that well-adhered deposits can be obtained by electrifying the sample prior to immersing in plating bath and without impact current. The insulation of backside electrode reduces the dissolution of aluminum layer and eliminates the pollution of plating bath. The deposition of copper and the dissolution of aluminum depend on the potential applied when the backside electrode is uninsulated. The aluminum on rear side will not be dissolved at a potential of -0.5 V vs. saturated calomel electrode.

关 键 词：硅太阳能电池 铜 光诱导沉积 铝背电极 结合力 

分 类 号：TQ153.14[化学工程—电化学工业] TQ153.3