反转结构有机发光二极管的电子注入层研究  

Improved Electron Injection in Inverted Bottom-emission Organic Light-emitting Diodes

作　　者：史常生[1,2] 冯玉玲[1] 陈江山[2] 马东阁[2] 

机构地区：[1]长春理工大学理学院,长春130022 [2]中国科学院长春应用化学研究所高分子物理与化学国家重点实验室,长春130022

出　　处：《长春理工大学学报（自然科学版）》2012年第1期112-115,共4页Journal of Changchun University of Science and Technology(Natural Science Edition)

基　　金：吉林省科技发展计划项目(20090127)

摘　　要：将薄层金属Al和含磷氧基团的有机材料DPSF依次蒸镀在ITO阴极上作为电子注入层,成功制备了具有反转结构的底发光有机发光二极管(IBOLED)。结果表明,Al/DPSF作为电子注入层可以有效降低ITO与发光层Alq3之间的注入势垒,大大降低了器件的工作电压,显著提高了器件的发光效率。反转器件的最大电流效率达到了4.9 cd A-1,最大亮度为17000 cd m-2,与正置器件的发光性能相当。Efficiently inverted bottom-emission organic light-emitting diodes （IBOhED） based on Indium Tin Oxide （ITO） cathode have been successfully fabricated using AI/DPSF （2, 7-bis （diphenylphosphoryl） -9, 9＇ -spirobi [fluorene] ） as the electron-injection layer. It was found that the electron injection barrier between ITO and the light-emitting layer of Tris （8-hydroxyquinolinato） aluminium （Alq3） can be significantly reduced at presence of A1/ DPSF, leading to the reduce of operating voltage and the improvement of efficiency in the IBOLEI）. The inverted de vice exhibits a maximum current efficiency of 4.9 ed A^-1 and a maximum luminance of 17000 cd m^-2, which can be comparable with the conventional OLED.

关 键 词：有机发光二极管 底发射 电子注入 ITO阴极 

分 类 号：N312.8[自然科学总论]