基于酞菁铜的有机光敏场效应管  

The Photoresponsive Organic Field-effect Transistors Based on Copper Phthalocyanine

作　　者：谢吉鹏[1,2] 吕文理[1] 杨汀[1] 姚博[1] 彭应全[1,3] 

机构地区：[1]兰州大学物理学院微电子研究所,甘肃兰州730000 [2]空军大连通信士官学校,辽宁大连116600 [3]兰州大学磁学与磁性材料教育部重点实验室,甘肃兰州730000

出　　处：《发光学报》2012年第9期991-995,共5页Chinese Journal of Luminescence

基　　金：国家自然科学基金(10974074);教育部博士点基金(20110211110005)资助项目

摘　　要：制备了基于酞菁铜(CuPc)的有机光敏场效应晶体管,对器件的光敏特性进行了研究。实验结果表明,基于金源漏电极的器件,在波长655 nm,光强100 mW/cm2的光照下,明/暗电流比约为0.4,光响应度约为2.55 mA/W;而铝为源漏电极的器件,可以获得高达104的明/暗电流比,但光响应度降低为0.39 mA/W。Organic field-effect transistors（OFETs） based on copper phthalocyanine were fabricated and their current-voltage characteristics were measured in dark/under illumination.The results showed that OFETs with Au as source/drain electrodes exhibited a photo-current/dark-current ratio of 0.4 and a photoresponsivity of 2.55 mA/W under illumination by a laser diode with a wavelength of 655 nm and power density of 100 mW/cm2;however,OFETs with Al as source/drain electrodes exhibited a photo-current/dark-current ratio up to 104 and a much lower photoresponsivity of 0.39 mA/W under the same conditions.The tremendous increase of photo-current/dark-current ratio is ascribed to the decrease of dark-current caused by Schottky contacts between Al source/drain electrodes and CuPc.

关 键 词：有机光敏场效应晶体管 酞菁铜 明/暗电流比 光响应度 

分 类 号：TN386[电子电信—物理电子学]