电源管理芯片过温保护电路的分析与设计  

Analysis and design of the power management chip over-temperature protection circuit

作　　者：郭利芳[1] 张颖斐[1] 姜生瑞[1] 

机构地区：[1]兰州交通大学电子与信息工程学院,甘肃兰州730070

出　　处：《电子测试》2012年第9期57-61,共5页Electronic Test

摘　　要：保护电路是电源管理芯片的一个重要环节,研究一种高可靠的保护电路是非常重要的。为了保证电源管理芯片在复杂的环境中可以正常使用,本文主要对其中的保护电路进行了详细的分析,并设计出过温保护电路。根据可重用性的设计方法,在CSMC0.5μm工艺下,利用Cadence spectre工具对过温保护电路进行前端仿真验证。在不同电源电压下,对保护功能开启时的温度、滞迟范围、滞迟开启温度都进行了仿真测试。通过滞迟模块既有效抑制了芯片温度的升高,又避免频繁对功率管的关断。Protection circuit is an important part of the power management chip, researching a high-reliable protection circuit is very important. In order to ensure the normal use of power management chip in a complex environment, it carried out a detailed analysis in protection circuit and design a over-temperature protection circuit in this paper. According to the reusable design methodology, using of Cadence specter tools, it proceed the front-end simulation to the over-temperature protection circuit in CSMC0.5 μ m process. Under the different supply voltages, we do the simulation tests at the temperature when protection feature is turned on~ hysteretic range, hysteresis opening temperature. By the hysteretic module, not only inhibit the rise of the chip temperature effectively, but also avoid frequently shut offthe power tube

关 键 词：可重用 迟滞 PTAT 

分 类 号：TN402[电子电信—微电子学与固体电子学] TN86