高性能带隙基准电压源的设计  

High-performance band gap voltage reference design

作　　者：姜生瑞[1] 郭利芳[1] 张颖斐[1] 

机构地区：[1]兰州交通大学电子与信息工程学院,甘肃兰州730070

出　　处：《电子测试》2012年第9期62-67,共6页Electronic Test

摘　　要：本文基于带隙基准电压源的工作原理,实现了一种利用PATA电流产生基准电压的高性能带隙基准源。该带隙基准源温度特性良好,具有较高精度的输出电压,所以使电源管理芯片的工作电压具有更小的温度系数,使芯片工作更稳定。利用Candance仿真器,基于CSMC0.5umCMOS工艺对电路进行仿真,对基准源进行仿真与分析。仿真结果表明,当R2=316时,基准电压有最好的温度特性;并运用Cadence软件中的"Calculator"工具计算出在该温度时,带隙基准电压源有最小的温漂系数。The paper implements a reference source whose reference voltage is generated from the PATA current based on the working principle of the bandgap reference voltage source. The designed bandgap reference has good temperature characteristics and the output voltage with high accuracy, so the operating voltage of the power management chip has a smaller temperature coefficient which makes the chip more stable. The paper carries out the circuit simulate with the CSMC0.5umCMOS processes. Simulation results show that the reference voltage has the best temperature characteristics when R2=316 and the bandgap reference voltage source has a minimum temperature drift coefficient in that temperature.

关 键 词：带隙基准电压源 PATA 温漂系数 电源抑制比 

分 类 号：TN402[电子电信—微电子学与固体电子学]