制取高纯氧氯化锆过程中絮凝剂对“二次除硅”的影响研究  

Effect of Polymeric Flocculent on Secondary Removal Silicon of Preparing High-purity Zirconium Oxychloride

作　　者：邓淑华[1] 郑文裕[1] 

机构地区：[1]广东工业大学化工系,广州510090

出　　处：《稀有金属》2000年第3期191-194,共4页Chinese Journal of Rare Metals

基　　金：广东省科学基金

摘　　要：制取高纯氧氯化锆过程中 ,采用阳离子型聚丙烯酰胺类絮凝剂进行二次除硅 ,取得了很好的效果 ,并提出絮凝机理、研究了PCAM型絮凝剂的浓度、用量、料浆温度、酸度及锆盐浓度对除硅率及过滤速度的影响。工业实践结果与实验结果相吻合。The removal of silicon contamination from solution is a key step in the process of preparation of high purity Zirconium oxychloride from zircon. Polymeric flocculent was used for the secondary removal of silicon from an acidic zirconium oxychloride solution and excellent results were obtained. The mechanism for the polymeric flocculation is presented. In addition, those various conditions that would affect the percentage of silicon removal and the rate of filtration, such as the concentration and amount of polymeric flocculent used, temperature and acidity of the reacting medium, concentration of zirconium under investigation, etc., were also discussed in detail. The results of experimental investigation applied coincide well in the practical industrial process.

关 键 词：絮凝剂 过滤速度 高纯氧氯化锆 二次除硅 

分 类 号：TQ134.12[化学工程—无机化工]