方形格子光子晶体能态密度特性  

Characteristics of Photonic Crystal State Density for Square Grid

作　　者：蔡元贞[1] 

机构地区：[1]临沂大学实验管理中心,山东省临沂市通达路18号276005

出　　处：《光谱实验室》2012年第5期2960-2962,共3页Chinese Journal of Spectroscopy Laboratory

摘　　要：应用平面波展开法研究砷化镓方形格子光子晶体能态密度的分布情况,得到填充率f随晶格半径a之间的变化对应的能态密度分布,得到砷化镓填充率f=0.20a时归一化频率存在最大光子带隙。研究结果为光子晶体器件的研究提供理论依据。The distribution status of GaAs square grid photonic crystal state density were studied by the plane wave expansion method,and the state density of distribution were obtained of filling rate f changing with the crystal lattice a,and the maximum absolute photonic band gap was gained when f=0.20a of GaAs.This results provides theoretic basis for the research of photonic crystal devices.

关 键 词：光子晶体 平面波展开法 能态密度 

分 类 号：O572.31[理学—粒子物理与原子核物理]