磁控溅射法在立方织构镍基底上制备CeO_2缓冲层  

Fabrication of CeO_2 Buffer Layer on Cube Textured Nickle Substrate by Magnetron Sputtering

作　　者：杨坚[1] 石东奇[1] 常世安[1] 袁冠森[1] 

机构地区：[1]北京有色金属研究总院超导中心,北京100088

出　　处：《稀有金属》2000年第4期292-295,共4页Chinese Journal of Rare Metals

基　　金：国家超导技术研究中心;国家自然科学基金资助

摘　　要：论述了具有立方织构的金属镍基底上 ,采用射频磁控溅射的方法制备CeO2 缓冲层。以Ar/H2 混合气体作为溅射气体 ,有效地抑制了NiO的形成 ,获得纯c轴取向的CeO2 薄膜。X射线 φ扫描、ω扫描和极图的测试分析表明 ,CeO2 薄膜在平面内和垂直于膜面方向晶粒都是有序排列的 ,具有良好的立方织构。The buffer layer CeO 2 film for YBCO tape deposited on the cube textured metallic nickle by using magnetron sputtering technique was reported. Ar and H 2 were used as sputtering gas while CeO 2 film was grown, which effectively inhibited the formation of NiO. X ray 2θ scan, φ scan and ω scan were used to measure the microstructure of the buffer layer. It was shown that CeO 2 film has good in plane and out of plane orientations, and demonstrates an excellent cube texture.

关 键 词：CeO2缓冲层 磁擦溅射 立方织构 金属镍 制备 

分 类 号：TM262.051[一般工业技术—材料科学与工程]