制备太阳能级多晶硅过程中湿法除杂研究  

Preparation of Solar Grade Silicon by Electrorefining and Acid Leaching

作　　者：邹祥宇[1] 谢宏伟[1] 翟玉春[1] 戴永年[2] 郎晓川[1] 

机构地区：[1]东北大学材料与冶金学院,辽宁沈阳110819 [2]昆明理工大学冶金与能源工程学院,云南昆明650031

出　　处：《有色矿冶》2012年第4期32-34,38,共4页Non-Ferrous Mining and Metallurgy

基　　金：辽宁省青年博士基金资助项目(20111011)

摘　　要：在熔盐电解精炼基础上结合常温酸洗技术对冶金硅进行精炼提纯制备太阳能级多晶硅。采用SEM对熔盐电解精炼前后冶金硅阳极表面和产物硅进行表征。考察了熔盐电解解精炼和酸洗过程中主要工艺参数:电精炼电压、电精炼温度、浸出剂种类、酸洗时间等对硅中杂质去除率的影响。当在2.0 V1、000 K条件下,电解精炼400 min再结合5%HNO3+5%HF混合酸酸洗8 h后产物硅中各杂质含量均小于1 ppm,产物硅的纯度达到99.999 9%以上。Purification of metallurgical silicon（MG-Si） for solar grade silicon（SOG-Si） with a combined technique of electrorefining with acid leaching had been studied in this paper.The electrorefining voltage,electrorefining temperature,acid species and time were researched.The result showed that the MG-Si was electrorefined in NaF-KF molten salt at 2.0 V for 400 min and the sample of electrorefined was acid leached by 5% HNO3＋5% HF for 8 h.The final impurities in the silicon sample mass fraction were reduced to 1 ppm and the purity of silicon sample was up to 99.9999 %.

关 键 词：熔盐电解精炼 酸洗 冶金硅 太阳能级多晶硅 

分 类 号：O545.5[理学—物理] TF123.133[冶金工程—粉末冶金]