Effect of varying layouts on the gate temperature for multi-finger AlGaN/GaN HEMTs  

作　　者：王建辉 王鑫华 庞磊 陈晓娟 金智 刘新宇 

机构地区：[1]Key Laboratory of Microwave Devices&Integrated Circuits,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

出　　处：《Journal of Semiconductors》2012年第9期60-64,共5页半导体学报（英文版）

基　　金：supposed by the National Basic Research Program of China(No.2010CB327503);the National Natural Science Foundation of China(No.60890191)

摘　　要：The impacts of varying layout geometries on the channel temperature of multi-finger AIGaN/GaN HEMTs are investigated by three-dimensional （3-D） thermal simulations. Micro-Raman thermography is selected to obtain a detailed and accurate temperature distribution of the sample for the verification of the 3-D thermal models. Thermal boundary resistance （TBR） plays an important role in the temperature distribution and is taken into account in the thermal model in order to improve the accuracy of the simulated results. The influence from the number of fingers, finger width and gate pitch on the gate temperature are systematically analysed using 3-D thermal simulations with validated model parameters. Furthermore, a robust method that could efficiently reduce the thermal crosstalk of multi-finger AlGaN/GaN HEMTs is proposed to optimize the thermal design of the device.The impacts of varying layout geometries on the channel temperature of multi-finger AIGaN/GaN HEMTs are investigated by three-dimensional （3-D） thermal simulations. Micro-Raman thermography is selected to obtain a detailed and accurate temperature distribution of the sample for the verification of the 3-D thermal models. Thermal boundary resistance （TBR） plays an important role in the temperature distribution and is taken into account in the thermal model in order to improve the accuracy of the simulated results. The influence from the number of fingers, finger width and gate pitch on the gate temperature are systematically analysed using 3-D thermal simulations with validated model parameters. Furthermore, a robust method that could efficiently reduce the thermal crosstalk of multi-finger AlGaN/GaN HEMTs is proposed to optimize the thermal design of the device.

关 键 词：AlGaN/GaN HEMTs thermal simulation thermal boundary resistance thermal management Raman spectroscopy 

分 类 号：TN386[电子电信—物理电子学] TN304.23