A strained Si-channel NMOSFET with low field mobility enhancement of about 140% using a SiGe virtual substrate  被引量:2

A strained Si-channel NMOSFET with low field mobility enhancement of about 140% using a SiGe virtual substrate

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作  者:崔伟 唐昭焕 谭开洲 张静 钟怡 胡辉勇 徐世六 李平 胡刚毅 

机构地区:[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,UESTC,Chengdu 610023,China [2]Science and Technology on Analog Integrated Circuit Laboratory,Chongqing 400060,China [3]Key Laboratory of the Ministry of Education for Wide-Band Gap Semiconductor Materials and Devices,Microelectronics School,Xidian University,Xi'an 710071,China

出  处:《Journal of Semiconductors》2012年第9期65-68,共4页半导体学报(英文版)

基  金:supposed by the National Basic Research Program of China;supposed by the State Key Laboratory of Electronic Thin Films and Integrated Devices,UESTC;the Science and Technology on Analog Integrated Circuit Laboratory,CETC

摘  要:A fully standard CMOS integrated strained Si-channel NMOSFET has been demonstrated. By adjusting the thickness of graded SiGe, modifying the channel doping concentration, changing the Ge fraction of the relaxed SiGe layer and forming a p-well by multiple implantation technology, a surface strained Si-channel NMOSFET was fabricated, of which the low field mobility was enhanced by 140%, compared with the bulk-Si control device. Strained NMOSFET and PMOSFET were used to fabricate a strained CMOS inverter based on a SiGe virtual substrate. Test results indicated that the strained CMOS converter had a drain leakage current much lower than the Si devices, and the device exhibited wonderful on/off-state voltage transmission characteristics.A fully standard CMOS integrated strained Si-channel NMOSFET has been demonstrated. By adjusting the thickness of graded SiGe, modifying the channel doping concentration, changing the Ge fraction of the relaxed SiGe layer and forming a p-well by multiple implantation technology, a surface strained Si-channel NMOSFET was fabricated, of which the low field mobility was enhanced by 140%, compared with the bulk-Si control device. Strained NMOSFET and PMOSFET were used to fabricate a strained CMOS inverter based on a SiGe virtual substrate. Test results indicated that the strained CMOS converter had a drain leakage current much lower than the Si devices, and the device exhibited wonderful on/off-state voltage transmission characteristics.

关 键 词:CMOS inverter strained Si mobility enhancement SiGe virtual substrate relaxed layer 

分 类 号:TN386[电子电信—物理电子学]

 

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