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作 者:张茂林[1] 袁战恒[2] 宋建平[2] 郑程[2]
机构地区:[1]西安电子科技大学技术物理学院,西安710071 [2]西安交通大学电信学院,西安710049
出 处:《无机材料学报》2012年第9期928-932,共5页Journal of Inorganic Materials
基 金:国家自然科学基金(61078020)~~
摘 要:通过浸渍法用H2PtCl6溶液修饰TiO2厚膜,经过不同的处理工艺,获得表面负载Pt粒子的Pt/TiO2厚膜.采用XRD和SEM分析了Pt/TiO2的物相结构和表面形貌,并通过电阻氧分压关系计算Pt/TiO2厚膜活化能.然后分别通过静态和动态测试法,表征了Pt/TiO2厚膜在H2/O2中的稳态阻值和动态响应时间.结果表明:受"spill-over"机制影响,Pt/TiO2厚膜在H2/O2气氛下的稳态电阻与Pt的散布状态有关.而样品响应时间不仅与Pt粒子的分布有关,还受表面活化能的影响,在Pt散布基本相同情况下,活化能越低,样品响应速度越快.Pt/TiO2 thick film gas sensors were modified by dipping method in H2PtCl6 contained solution. In order to get different Pt/TiO2 surface states, the thick films were treated with different process. Microstructural and morphological characteristics were investigated by XRD and SEM. The resistance-oxygen partial pressure relationship was used to calculate activation energy (E) of this film. Steady-state resistance and dynamic response of the sensor exposed to H2/O2 were tested, separately. The results indicated that the steady-state resistance which affected by "spill-over" effect arose from the Pt distribution states. However, the response time was associated with the activation energy (E). Sensors with lower activation energy exhibited a faster rate of response when the magnitude of response was approximately uniform.
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