预烧温度对PZN-PZT压电陶瓷电性能的影响  

Effect of the calcining temperature on piezoelectric ceramics of PZN-PZT

作　　者：沈小婷[1] 范桂芬[1] 王允祺[1] 吕文中[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《电子元件与材料》2012年第10期1-4,共4页Electronic Components And Materials

基　　金：中央高校基本科研业务基金资助项目(No.2010MS006);高等学校博士学科点专项科研基金资助项目(No.20100142120091)

摘　　要：采用传统固相法制备了化学计量比为0.3Pb(Zn1/3Nb2/3)O3-0.35PbTiO3-0.35PbZrO3的压电陶瓷,研究了所制陶瓷的预合成温度对其微观结构和压电介电性能的影响。结果显示,当预合成温度大于800℃时可以获得纯钙钛矿相,低于800℃钙钛矿主晶相不明显且有很多杂相产生。当预烧温度为775℃时,经1 125℃保温3 h烧结的陶瓷具有最佳综合性能:d33=431 pC/N、k31=0.36、Ec=9.98×103 V/mm、Pr=22.52×10–6 C/cm2、εr=1 874、tanδ=0.024、ρ=7.88 g/cm3。The 0.3Pb（Zn1/3Nb2/3）O3-0.35PbTiO3-0.35PbZrO3 piezoelectric ceramics were prepared by conventional solidstate reaction method. The effects of calcining temperatures on microstructure, piezoelectric and dielectric properties of prepared ceramics were investigated. The results show that the lowest synthesized temperature is 800 ℃, below which the samples contain impurity phases. Moreover, when calcined at 775 ℃ and sintered at 1 125 ℃, the samples show the best comprehensive properties： d33=431 pC/N, κ31=0.36, Ec=9.98 × 10^3 V/mm, Pr =22.52× 10^-6 C/cm^2, εr=1 874, tanσ=0.024, ρ=7.88 g/cm^3, respectively.

关 键 词：压电陶瓷 PZN-PZT 预烧温度 

分 类 号：TM277[一般工业技术—材料科学与工程]