Bi_(1.5)Mg_(1.0)Nb_(1.5)O_7薄膜的介电损耗机理研究  

Investigation on dielectric loss mechanism in Bi_(1.5)Mg_(1.0)Nb_(1.5)O_7 thin films

作　　者：肖勇[1] 许程源[1] 张光强[1] 蒋书文[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《电子元件与材料》2012年第10期19-21,24,共4页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(No.50972024)

摘　　要：采用射频磁控溅射法在Al2O3基片上沉积了铌酸铋镁(Bi1.5Mg1.0Nb1.5O7,BMN)薄膜,研究了不同退火条件下BMN薄膜的介电损耗机理。结果表明,充分的退火能够减小氧空位缺陷密度,并降低介电损耗。氧气气氛下退火能够有效补偿BMN薄膜中的氧空位,使得介电损耗进一步降低。这说明氧空位导致的带电缺陷损耗是BMN薄膜材料主要的介电损耗机制。此外,BMN薄膜中也存在晶界损耗机制。Bismuth magnesium niobate （Bi1.5MgNb1.5O7, BMN） thin films were deposited on Al2O3 substrate by radio frequency magnetron sputtering method. The dielectric loss mechanisms of BMN thin films annealed in different conditions were investigated. The results show that the dielectric loss and the oxygen vacancies defect density of BMN thin films decrease after fully annealing. Furthermore, oxygen vacancies in BMN thin films are compensated after annealing in oxygen atmosphere, which leads the further decrease of dielectric loss of BMN thin films. Therefore, the charged defects loss induced by oxygen vacancies is the main dielectric loss mechanism of BMN thin films. In addition, the grain boundaries loss is another dielectric loss mechanism of BMN thin films.

关 键 词：铌酸铋镁(BMN)薄膜 氧空位 介电损耗机制 退火 

分 类 号：TN304.2[电子电信—物理电子学]