黑硅材料表面反射率计算  

Calculation of the Black Silicon Surface Reflectivity

作　　者：廖承菌[1,2] 唐润生[1] 李学铭[1,2] 廖华[1] 杨培志[1,2] 

机构地区：[1]云南师范大学太阳能研究所,云南昆明650092 [2]可再生能源材料先进技术与制备教育部重点实验室,云南昆明650092

出　　处：《云南师范大学学报（自然科学版）》2012年第5期13-18,共6页Journal of Yunnan Normal University:Natural Sciences Edition

摘　　要：黑硅材料因具有宽光谱吸收特性,被认为在遥感、光通信、微电子及太阳电池领域有重要的潜在应用价值。为了解该特性的形成机理,首先建立了黑硅材料微结构的几何模型,然后结合辐射传热理论计算了该材料表面的反射率。结果表明:黑硅材料的吸收率与几何模型的纵横比呈正相关性。Black silicon material was considered an important potential application in the field of remote sensing , optical communications, microelectronics and solar cells, because of wide spec tral absorption characteristics. In order to understand the characteristics of the formation mecha nism, first establish a geometric model of the black silicon material microstructure, and then combined with the radiative heat transfer theory to calculate the reflectivity of the surface of the material. The results showed that： the positive correlation between the absorption rate of the black silicon material and geometric model of aspect ratio.

关 键 词：黑硅 宽光谱吸收 辐射传热 

分 类 号：TB383[一般工业技术—材料科学与工程]