Ka波段宽带薄膜匹配负载设计与制备研究  

Design and Fabrication of Ka-Band Broadband Thin Film Terminations

作　　者：王磊[1] 彭斌[1] 蒋洪川[1] 王渊朝[1] 李凌[1] 张万里[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《电子器件》2012年第4期375-378,共4页Chinese Journal of Electron Devices

基　　金：教育部支撑技术项目(625010305);四川省科技支撑计划项目(2011GZ0118);中央高校基本科研业务费项目(ZYGX2010X007)

摘　　要：基于实频法思想设计了Ka波段薄膜匹配负载的宽带匹配网络,并利用ADS和HFSS软件进行了仿真和优化。仿真结果表明,在32 GHz～40 GHz频率范围内,所设计匹配负载的电压驻波比均小于1.2。利用丝网印刷以及直流磁控溅射工艺制备了所设计的薄膜匹配负载。测试结果表明,所制备的TaN薄膜匹配负载在30.3 GHz～37.4 GHz频率范围内,其电压驻波比均小于1.3。A Ka-band thin film termination with broadband matching network had been designed by real frequency method. The microwave characteristics of the thin film termination had been simulated and optimized in ADS and HFSS software. The simulation results show that the VSWR of the film termination is less that 1.2 at the frequency range of 32 GHz -40 GHz. The designed termination was fabricated by screen printing method and DC magnetron sputtering. The experimental results show that the VSWR of the fabricated termination is less than 1. 3 at the frequency range of 30.3 GHz - 37.4 GHz.

关 键 词：微波无源器件 薄膜匹配负载 宽带匹配 KA波段 TaN薄膜 

分 类 号：N61[自然科学总论]