烧结温度对厚膜电阻的影响研究  

Study on Effect of Sintering Temperature on Thick Film Resistance

作　　者：张显[1] 朱耀寰[1] 王海丰[1] 

机构地区：[1]西安电子科技大学技术物理学院,西安710071

出　　处：《电子器件》2012年第4期394-398,共5页Chinese Journal of Electron Devices

摘　　要：以钌系R-2200厚膜电阻浆料作为研究对象,探讨了烧结温度、保温时间和升温速率工艺因素对其阻值及电阻温度系数(TCR)的影响。利用导电机理模型和液相烧结模型,说明了烧结工艺对钌系厚膜电阻性能的影响。实验数据与SEM表明:厚膜浆料烧结温度在875℃时,结构均匀且致密性好;烧结温度过低时,结构不稳定,功能相没有形成导电网络;而烧结温度过高时,RuO2晶粒异常长大,导电链断裂,势垒升高。Using R-2200 Series thick film resistor paste as an object, we study how the resistance and TCR （Temperature Coefficient of Resistance）are controlled by the sintering temperature,holding time and heating rate. By the conductive mechanism model and liquid-phase sintering model to find out the affect of processing factor de- pendence of the Ru-based thick film resistors. The data and SEM show that when sintering temperature at 875 ~C, the structure is uniformly and densely. The structure is unstable and the conductive phase can＇t form the conducting network at low sintering temperature. RuO2 particles grow, conducting network break and barrier increase at high sintering temperature.

关 键 词：厚膜电阻 烧结 阻值 TCR 液相烧结 

分 类 号：TN542[电子电信]