一款基于0.13μm CMOS工艺,0.1GHz～18GHz采用双反馈和噪声消除技术的低噪声放大器设计(英文)  

A Novel 0.1 GHz～18 GHz LNA in 0.13 μm CMOS Exploiting Double-Feedback and Noise-Cancellation

作　　者：梁元[1] 张弘[1] 

机构地区：[1]西安电子科技大学宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《电子器件》2012年第4期399-405,共7页Chinese Journal of Electron Devices

基　　金：The foundation assistance of State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology;The Key Laboratory of Wide Band-gap Semiconductor Materials and Devices of Ministry of Education;The Fundamental Research Funds forCentral Universities(k50510250010)

摘　　要：介绍一款1.2 V 0.1 GHz～18GHz超带宽级联型低噪声放大器。该LNA采用反馈网络来简化超宽带匹配并且不导致振荡。引入反相器结构作为第二级从而实现噪声消除。同时采用了感性尖峰技术来拓展带宽,所采用电感占用较小面积。带内噪声指数小于4 dB,输入输出反射系数均优于-10 dB。最大,最小正向增益分别为15.34 dB,14.54 dB,带内平稳增益得以实现。9GHz得到的IIP3和1dB增益压缩点分别为-4 dBm及-24 dbm。总功耗为30 mW。A novel 1.2 V,0.1 GHz- 18.0 GHz cascade LNA（ Low Noise Amplifier）is reported. Feedback network is utilized to facilitate broadband matching instead of introducing oscillation. An inverter is employed as the second stage for noise-cancellation. Low Q inductive peaking and series peaking are included to extend the operation bandwidth, and the applied inductors are with low area consumption. The LNA achieves a noise figure （NF）less than 4 dB with both I/O reflection coefficient better than -10 dB. The maximum forward gain reaches 15.34 dB while the minimum one is 14. 54 riB, gain flatness is therefore captured. IIP3 of -4 dBm alone with the 1 dB desensitization point of -24 dBm at 9 GHz are found, at the expense of 30 mW power dissipation.

关 键 词：固态器件及电路 计算机辅助设计 超带宽低噪声放大器 级联结构 双反馈结构 噪声消除技术 

分 类 号：TN722.3[电子电信—电路与系统] TN432