直接带隙半导体系统中的磁相互作用  

Spin interactions in direct-gap semiconductors

作　　者：孙放[1] 唐政[1] 

机构地区：[1]华东师范大学极化材料与器件教育部重点实验室,上海200241

出　　处：《华东师范大学学报（自然科学版）》2012年第5期31-36,共6页Journal of East China Normal University(Natural Science)

基　　金：973国家重大科学研究计划(2007CB924902);国家自然科学基金(10775053);国家自然科学基金(61076089)

摘　　要：运用精确的量子蒙特卡洛技术,研究了直接带隙半导体系统(Haldane-Anderson模型)中的磁相互作用.精确的数值解揭示了两种截然不同的自旋关联函数,均没有显示出明显的RKKY振荡行为;并且随着不同参数的变化,自旋关联函数呈现相当复杂的多因素控制的显著特征.这些行为对于理解一些磁性的半导体系统会有很大帮助,例如,稀磁半导体等.This paper studied spin interactions in a direct-gap system with the two-impurity Haldane-Anderson model, by using exact quantum Monte Carlo method. Exact numerical results revealed two types of magnetic correlation functions, and none of them showed clearly RKKY- type oscillatory behavior. Besides, it was observed that magnetic correlation in the system was complicated and multifactor controlled. The complex magnetic behaviors observed in this study would be helpful for understanding the magnetic properties of a gaped system, sneh as the dilute magnetic semiconductors.

关 键 词：量子蒙特卡洛 直接带隙半导体 Haldane-Anderson模型 RKKY 

分 类 号：O469[理学—凝聚态物理]