Longitudinal,transverse,density-of-states,and conductivity masses of electrons in(001),(101) and(111) biaxiallystrained-Si and strained-Si_(1-x)Ge_x  

作　　者：SONG JianJun YANG Chao ZHANG HeMing HU HuiYong ZHOU ChunYu WANG Bin 

机构地区：[1]Key Lab of Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China

出　　处：《Science China(Physics,Mechanics & Astronomy)》2012年第11期2033-2037,共5页中国科学：物理学、力学、天文学（英文版）

基　　金：supported by the Research Fund for the Doctoral Program of Higher Education of China (Grant No. JY0300122503);the National key Laboratory of Analog Integrated Circuitry Research Fund (Grant No.P140c090303110c0904)

摘　　要：In this study,the electron effective masses,including longitudinal,transverse,density-of-states and conductivity effective masses,have been systematically investigated in(001),(101) and(111) biaxially strained Si and Si1-xGex.It is found that the effect of strain on the longitudinal and transverse masses can be neglected,that the density-of-states masses in(001) and(110) biaxially strained Si and Si1-xGex materials decrease significantly with increasing Ge fraction(x),and that the conductivity masses along typical orientations in(001) and(110) strained Si and Si1-xGex.are obviously different from those in relaxed Si.The quantitative results obtained from this work may provide valuable theoretical references to understanding strained materials physics and studying conduction channel design related to stress and orientations in the strained devices.In this study, the electron effective masses, including longitudinal, transverse, density-of-states and conductivity effective masses, have been systematically investigated in （001）, （101） and （111） biaxially strained Si and Si1-xGex. It is found that the effect of strain on the longitudinal and transverse masses can be neglected, that the density-of-states masses in （001） and （110） biaxially strained Si and Si1-xGex materials decrease significantly with increasing Ge fraction （x）, and that the conductivity masses along typical orientations in （001） and （110） strained Si and Si1-xGex.are obviously different from those in relaxed Si.The quantitative results obtained from this work may provide valuable theoretical references to understanding strained materials physics and studying conduction channel design related to stress and orientations in the strained devices.

关 键 词：strained Si strained Si1-xGex effective mass electron 

分 类 号：O562.5[理学—原子与分子物理] TU411.7[理学—物理]