低能原电子下形状因子对金属曲面二次发射系数的影响  

Influence of Shape-Gene on Secondary Electron Emission of Curved-Surfaces in Low-Octane Primary Electron

作　　者：陈占林[1] 龙建飞[1] 田立成[1] 

机构地区：[1]兰州空间技术物理研究所表面工程技术重点实验室,兰州730000

出　　处：《真空科学与技术学报》2012年第9期789-792,共4页Chinese Journal of Vacuum Science and Technology

摘　　要：提出金属曲面二次电子发射的形状因子概念,并从理论上论述了形状因子对曲面二次电子发射系数的影响。从半经验理论出发,推导出低能原电子入射下,金属曲面二次发射系数与入射角的近似关系,并结合曲面形状,得到形状因子一般表达式,进而求出金属曲面的二次发射系数。以圆柱曲面为例,计算其形状因子和低能入射下其二次发射系数,并用实验数据证明了该理论的正确性,最后对结果进行了讨论,得到如下结论:在低能原电子入射情况下,金属曲面二次发射系数为金属材料二次发射系数与形状因子相乘所得。We theoretically addressed the impact of the incident angle of the low-octane primary electron on the secondary electron emission characteristics,and the relationship between the secondary electron emission coefficient and the curvature of metal surfaces.First,the dependence of the secondary electron emission coefficient from metal surfaces on the incident angle of the low-octane primary electron was approximated and formulated based on the semi-classical theorem.Then,a shape-gene,a mathematical term describing the curved metal surface,was defined and used to derive the secondary electron emission coefficient from the curved surface.Finally,the experiment with Al cylindrical surfaces was designed,and performed to test the calculated results.The results show that the secondary electron emission coefficient of the curved metal surface is directly proportional to that of the flat surface,with the shape-gene as the slop.

关 键 词：形状因子 金属曲面 二次电子发射系数 

分 类 号：O462.2[理学—电子物理学]