B掺杂对Ti薄膜结构与性能的影响  

Influence of B doping on structure and properties of Ti Thin Film

作　　者：张玲[1,2] 何智兵[2] 廖国[1,2] 谌家军[1] 许华[2] 李俊[2] 

机构地区：[1]西华师范大学物理与电子信息学院,南充637002 [2]中国工程物理研究院激光聚变研究中心,高温高密度等离子体物理重点实验室,绵阳621900

出　　处：《物理学报》2012年第18期420-427,共8页Acta Physica Sinica

基　　金：中国工程物理研究院激光聚变研究中心等离子体物理重点实验室基金(批准号:9140c680501007)资助的课题~~

摘　　要：采用双靶共溅射方法制备了微量B掺杂的Ti薄膜样品,利用X射线光电子能谱、扫描电子显微镜和X射线衍射仪对样品的掺杂原子浓度、表面形貌、晶型结构、晶粒尺寸和应力进行了分析表征.研究表明:掺杂后的Ti薄膜晶粒得到明显细化,并随着掺杂浓度的增大,薄膜的晶粒尺寸呈减小趋势,当掺杂浓度为5.50 at%时,Ti薄膜晶粒尺寸减小为1.3 nm,呈现出致密的柱状结构.B掺杂后的Ti薄膜应力由压应力转变为张应力.B-doped Ti film is fabricated by direct current magnetron sputtering. The doping concentration, surlace morplaology, crystal structure, crystal grain diameter and stress are characterized by X-ray photoelectron spectroscopy, scanning electron microscopy and X-ray diffraction, respectively. It is found that, with the increase of B doping, the crystal grain diameter decreases monotonically and reaches a minimum of 1.3 nm at a B doping concentration of 5.50 at.%. The B-doped Ti film presents a compact columnar structure at that concentration. The stress of Ti film changes from compressive stress to tensile stress when B is doped.

关 键 词：Ti薄膜 B掺杂 表面形貌 磁控溅射 

分 类 号：O484.1[理学—固体物理]