Spacer layer thickness fluctuation scattering in a modulation-doped Al_xGa_(1-x)As/GaAs/Al_xGa_(1-x)As quantum well  

作　　者：谷承艳 刘贵鹏 时凯 宋亚峰 李成明 刘祥林 杨少延 朱勤生 王占国 

机构地区：[1]Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,P.O.Box 912

出　　处：《Chinese Physics B》2012年第10期435-438,共4页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos. 60976008,61006004,61076001,and10979507);the National Basic Research Program of China (Grant No. A000091109-05);the National High Technology Research and Development Program of China (Grant No. 2011AA03A101)

摘　　要：We theoretically study the influence of spacer layer thickness fluctuation（SLTF） on the mobility of a twodimensional electron gas（2DEG） in the modulation-doped Al x Ga 1 x As/GaAs/Al x Ga 1 x As quantum well.The dependence of the mobility limited by SLTF scattering on spacer layer thickness and donor density are obtained.The results show that SLTF scattering is an important scattering mechanism for the quantum well structure with a thick well layer.We theoretically study the influence of spacer layer thickness fluctuation（SLTF） on the mobility of a twodimensional electron gas（2DEG） in the modulation-doped Al x Ga 1 x As/GaAs/Al x Ga 1 x As quantum well.The dependence of the mobility limited by SLTF scattering on spacer layer thickness and donor density are obtained.The results show that SLTF scattering is an important scattering mechanism for the quantum well structure with a thick well layer.

关 键 词：spacer layer thickness fluctuation scattering interface roughness scattering 2DEG mobility 

分 类 号：TN386[电子电信—物理电子学]