Efficiency droop alleviation in blue light emitting diodes using the InGaN/GaN triangular-shaped quantum well  

作　　者：陈钊 杨薇 刘磊 万成昊 李磊 贺永发 刘宁炀 王磊 李丁 陈伟华 胡晓东 

机构地区：[1]State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics,Peking University

出　　处：《Chinese Physics B》2012年第10期522-526,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos. 61076013,51102003,and 60990313);the National Basic Research Program of China (Grant No. 2012CB619304);the Specialized Research Fund for the Doctoral Program of Higher Education,China (Grant No. 20100001120014)

摘　　要：The InGaN/GaN blue light emitting diode（LED） is numerically investigated using a triangular-shaped quantum well model,which involves analysis on its energy band,carrier concentration,overlap of electron and hole wave functions,radiative recombination rate,and internal quantum efficiency.The simulation results reveal that the InGaN/GaN blue light emitting diode with triangular quantum wells exhibits a higher radiative recombination rate than the conventional light emitting diode with rectangular quantum wells due to the enhanced overlap of electron and hole wave functions（above 90%） under the polarization field.Consequently,the efficiency droop is only 18% in the light emitting diode with triangular-shaped quantum wells,which is three times lower than that in a conventional LED.The InGaN/GaN blue light emitting diode（LED） is numerically investigated using a triangular-shaped quantum well model,which involves analysis on its energy band,carrier concentration,overlap of electron and hole wave functions,radiative recombination rate,and internal quantum efficiency.The simulation results reveal that the InGaN/GaN blue light emitting diode with triangular quantum wells exhibits a higher radiative recombination rate than the conventional light emitting diode with rectangular quantum wells due to the enhanced overlap of electron and hole wave functions（above 90%） under the polarization field.Consequently,the efficiency droop is only 18% in the light emitting diode with triangular-shaped quantum wells,which is three times lower than that in a conventional LED.

关 键 词：efficiency droop alleviation InGaN/GaN triangular quantum well blue light emitting diode 

分 类 号：TN312.8[电子电信—物理电子学]