垂直结构多色量子点LED(QD-LED)最新进展  

Development of vertical structural light emitting diodes based on multi-color colloidal quantum dot

作　　者：张文君[1] 许键[1] 翟保才[1] 

机构地区：[1]上海理工大学光电信息与计算机工程学院,上海200093

出　　处：《光学技术》2012年第5期539-544,共6页Optical Technique

基　　金：国家自然科学基金(61078007)

摘　　要：量子点LED以胶体量子点为发光层,通过调节作为发光层量子点的尺寸可以制作出覆盖可见(380-780nm)以及近红外光谱的量子点LED(QD-LED),而且量子点LED器件发出的光谱范围很窄,其光谱半高宽可达30nm。简述了当今国内外关于QD-LED器件结构的研究成果以及器件的制作工艺,介绍了目前课题组最新的一些相关成果。重点阐述了目前已经得到验证的几种量子点器件结构,分析了其存在的优缺点,这些结论对进一步改进QD-LED的结构以及使其可以更有利于商业化提供了参考。Semiconductor nanocrystal quantum dots （QDs） acted as luminescent layer in organic light emitting device can be tuned across from visible to near-infrared spectrum by changing the size of QD, and device has a narrow bandwidth （full-width at half-maximum （FWHM） of the electroluminescence （EL） peak of ~30 nm）. The research achievements of structures of quantum dot light-emitting diodes （QD-LED） and fabrication process of device achieved by the researchers in the field are summarized, and some new research results achieved in the subject are showed. Many structures of QD-LED which have been demonstrated are especially introduced. Merits and defects of structures of QD-LED mentioned above are analyzed, which may be more convenient to improve the structure of QD-LED and make it further commercial.

关 键 词：光学器件 量子点 量子点发光二极管 多色量子点LED 

分 类 号：TN383.1[电子电信—物理电子学]