An Investigation on a Tin Fixed Abrasive Polishing Pad with Phyllotactic Pattern for Polishing Wafer  

作　　者：吕玉山 刘电飞 寇智慧 

机构地区：[1]School of Mechanical Engineering,Shenyang Ligong University

出　　处：《Defence Technology（防务技术）》2012年第3期174-180,共7页Defence Technology

基　　金：Sponsored by the National Nature Science Foundation of China (50875179)

摘　　要：In order to improve the polishing ability of polishing pads, a kind of polishing pad with the tin fixed abrasive blocks, which are arranged based on the phyllotaxis theory of biology, was designed and fabricated by the use of electroplating technology, and also its polishing ability for JGS-2 wafer was investigated by polishing experiments. The research results show that the phyllotactic parameters of the polishing pad influence the arrangement density of the tin fixed abrasive blocks, the polishing pad with phyllotactic pattern is feasibly fabricated by the use of electroplating technology, and the good polishing result can be obtained by using the polishing pad with phyllotactic pattern to polish a wafer when the diameter D of the tin fixed abrasive block is between Φ1.3 mm and Φ1.4 mm, and the phyllotactic coefficient k between 1.0 and 1.1,respectively.In order to improve the polishing ability of polishing pads, a kind of polishing pad with the tin fixed abrasive blocks, which are arranged based on the phyllotaxis theory of biology, was designed and fabricated by the use of electroplating technology, and also its polishing ability for JGS-2 wafer was investigated by polishing experiments. The research resuits show that the phyllotactic parameters of the polishing pad influence the arrangement density of the tin fixed abrasive blocks, the polishing pad with phyllotactic pattern is feasibly fabricated by the use of electroplating technology, and the good polishing result can be obtained by using the polishing pad with pbyllotactic pattern to polish a wafer when the diameter D of the tin fixed abrasive block is between Φ. 3 mm and Φ1. 4 mm, and the phyllotactic coefficient k between 1.0 and 1.1, respectively.

关 键 词：machinofature technique and equipment POLISHING polishing pad phyllotactic pattern 

分 类 号：TN305.2[电子电信—物理电子学]