高性能ZnO低压压敏电阻器的研制及产业化  

Study and Industrialization on High Performance Low Voltage ZnO Varistor

作　　者：唐斌[1] 陈加旺[1] 李强[1] 岑权进[1] 陈加增[1] 

机构地区：[1]湖北十堰东风汽车公司,十堰442001

出　　处：《现代技术陶瓷》2012年第3期54-56,共3页Advanced Ceramics

摘　　要：通过采用独特的Zn-Bi-Ti-Sn配方体系,并运用高温(800℃)烧银技术,可实现压敏电压低压化,并能很好解决低压极性问题。制得的产品其压敏场强约20V/mm左右,电压极性为1V以下,非线性系数大30以上,泄漏电流5μA以下,限制电压比约1.5(2.5A),芯片Φ10mm产品经1300A雷电流(8/20μS)冲击,压敏电压变化率为-3%左右,产品已实现产业化。The low voltage and voltage polarity problems were solved by using a unique Zn-Bi- Ti - Sn formula system and firing silver technology of 850℃. Obtained products have following advanta- ges：voltage gradient （20V/mm）, voltage polarity（〈1V）, nonlinear coefficent （〉30）, leakage current （〈5μA）,clamp voltage ratio（1.5,2.5A）. The devices of Φ10mm chip have a peak lightning current （1300A,8/20μS）, the varistor voltage change ratio（-3%）. The products were achieved industrialization.

关 键 词：ZnO低压压敏陶瓷 Bi2O3 TiO2 SnO2掺杂 电性能 压敏场强 

分 类 号：TQ174.758[化学工程—陶瓷工业]