Radiation effect on the optical and electrical properties of CdSe(In)/p-Si heteroj unction photovoltaic solar cells  

作　　者：M.Ashry S.Fares 

机构地区：[1]National Center for Radiation Research and Technology(NCRRT),AEA,P.O.29 Nasr City,Egypt

出　　处：《Journal of Semiconductors》2012年第10期1-4,共4页半导体学报（英文版）

摘　　要：The efficiency and radiation resistance of solar cells are graded.They are then fabricated in the form of n-CdeSe（In）/p-Si heterojunction cells by electron beam evaporation of a stoichiomteric mixture of CdSe and In to make a thin film on a p-Si single crystal wafer with a thickness of 100μm and a resistivity of～1.5Ω·cm at a temperature of 473 K.The short-circuit current density（jsc）,open-circuit voltage（Voc）,fill factor（ff） and conversion efficiency（η） under 100 mW/cm^2（AMI） intensity,are 20 mA/cm^2,0.49 V,0.71 and 6%respectively. The cells were exposed to different electron doses（electron beam accelerator of energy 1.5 MeV,and beam intensity 25 mA）.The cell performance parameters are measured and discussed before and after gamma and electron beam irradiation.The efficiency and radiation resistance of solar cells are graded.They are then fabricated in the form of n-CdeSe（In）/p-Si heterojunction cells by electron beam evaporation of a stoichiomteric mixture of CdSe and In to make a thin film on a p-Si single crystal wafer with a thickness of 100μm and a resistivity of～1.5Ω·cm at a temperature of 473 K.The short-circuit current density（jsc）,open-circuit voltage（Voc）,fill factor（ff） and conversion efficiency（η） under 100 mW/cm^2（AMI） intensity,are 20 mA/cm^2,0.49 V,0.71 and 6%respectively. The cells were exposed to different electron doses（electron beam accelerator of energy 1.5 MeV,and beam intensity 25 mA）.The cell performance parameters are measured and discussed before and after gamma and electron beam irradiation.

关 键 词：n-CdSe（In）/p-Si solar cells performance electron beam radiation effects 

分 类 号：TM914.4[电气工程—电力电子与电力传动] TN305.99[电子电信—物理电子学]