La_(1-x)Sr_xMnO_3薄膜的制备、微观结构及电性能  

Fabrication,Microstructure and Electrical Properties of La_(1-x)Sr_xMnO_3 Films

作　　者：高文娟[1] 殷明志[1] 徐驰[1] 彭焕英[1] 

机构地区：[1]西北工业大学理学院,西安710129

出　　处：《材料导报》2012年第18期10-13,共4页Materials Reports

基　　金：航天支撑基金(2009613305);西北工业大学研究生创业种子基金(z2012167)

摘　　要：以无机盐为原料,采用溶胶-凝胶法在Si衬底上制备了La1-xSrxMnO3(LSMO)薄膜。XRD和TEM测试表明LSMO薄膜呈现纳米多晶菱形钙钛矿结构,薄膜的(012)、(110)晶面间距分别为0.38nm、0.28nm。SEM分析表明LSMO薄膜表面平整、光滑致密。电学测试La1-xSrxMnO3/Si异质结的I-V特性曲线表明,随着Sr掺杂量的增加,同一偏压下的开启电压变小,当电压大于10V时,La1-xSrxMnO3/Si异质结的电流迅速增大,呈现传统的p-n结特征。The La1-x Srx MnO3 （LSMO） films were fabricated on Si substrates hy sobgel processes with inor ganic salts. The films exhibited polycrystal diamond perovskite structure, and the interplanar crystal spacing of （012）, （110）were about 0.38nm, 0. 28nm respectively characterized by Xray diffraction（XRD） and transmission elec tron microscopy（TEM）. The morphologies were flat, smooth and dense analyzed by scanning electron microscopy （SEM）. The fV curves of LSMO/Si heterojunction showed that under same bias voltage, the opening voltage de- creased with the doping Sr increasing, and the current increased rapidly when it was exceeding 10V as traditional semi- conductor p-n junction.

关 键 词：溶胶-凝胶法 异质结 LSMO/Si电性能 P-N结 

分 类 号：O484.5[理学—固体物理]